I have recently got to learn that the hole diffusion current and electron diffusion current both point towards the N side in a PN junction? And the diffusion current is hence towards the N side.And thus, an electric field is produced towards the P side to counteract the force of this diffusion current which gives rise to drift current towards the p side as well...
Why does the electron diffusion current point towards the N side when electrons are diffusing to the P side from the N side?
Also a follow up, in a non-uniformly doped semiconductor, shouldn't the diffusion current point towards the direction of the region that has a relatively greater concentration of charge carriers, since the diffusion, without the influence of any electric field, is driven by the repulsive forces between similarly charged ions, so shouldn't the region with more concentration of charged ions diffuse to the other side more, and hence contribute to the total diffusion current more than the other side?